| PART |
Description |
Maker |
| HFA15TB60 HFA15TB60-1 |
600V 15A HEXFRED Discrete Diode in a TO-220AC package
600V 15A HEXFRED Discrete Diode in a TO-262 package
|
International Rectifier
|
| HFA16TB120S HFA16TB120STRR HFA16TB120STRL |
1200V 16A HEXFRED Discrete Diode in a D2-Pak (HEXFRED) package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| STS1NK60Z 9448 S1NK60Z |
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET
From old datasheet system
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH⑩ Power MOSFET
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH?/a> Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HFA16TB120 |
1200V 16A HEXFRED Discrete Diode in a TO-220AC package
|
International Rectifier
|
| HFA180NH40 |
400V 180A HEXFRED Discrete Diode in a D-67 Half-Pak package
|
International Rectifier
|
| MURS120 MURS120TR |
200V 1A HEXFRED Discrete Diode in a SMB package
Ultrafast Rectifier
|
International Rectifier
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
| IRG4BC40WS IRG4BC40WL |
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
