| PART |
Description |
Maker |
| IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology
Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
| Q67040S4726 IGW75N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology
|
INFINEON[Infineon Technologies AG]
|
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| AOD2C60 |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| AOB10T60P |
Trench Power AlphaMOS-II technology
|
TY Semiconductor Co., Ltd
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| STN4438 |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2318SRG |
ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| STN9926 |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
