| PART |
Description |
Maker |
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S
Power MOSFET(Vdss=20V Rds(on)=0.050ohm)
Power MOSFET(Vdss=20V, Rds(on)=0.050ohm)
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRF7204 IRF7204TR |
TRI N PLUG M 0-48 NO SEAL
Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRF7401 IRF7402 IRF7401TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
|
IRF[International Rectifier]
|
| SSG4520H12 |
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| 2SA1834 A5800344 2SC5001 2SC5001TLR 2SA1834TLR 2SC |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|律师- 63
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SC-63
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | SC-63
Low VCE(sat) Transistor (Strobe flash) (-20V, -10A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| RTF015P02 |
Power Supply IC; Package/Case:10-MLP; Cap Charger Output Type:Three levels of switch current limit: 1.6, 1.8, 2.0 A; Output Type:Current; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Supply Voltage Min:3V RoHS Compliant: Yes
DC-DC Converter (20V/ 1.5A)
DC-DC Converter (-20V, -1.5A)
DC-DC Converter (−20V, −1.5A)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| IRF6601 |
DirectFET⑩ Power MOSFET(Vdss=20V)
DirectFET Power MOSFET(Vdss=20V)
|
IRF[International Rectifier]
|
| IRF7663 IRF7663TR |
Trench Technology
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-20V/ Rds(on)=0.020ohm)
|
IRF[International Rectifier]
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF7F3704 |
HEXFET? POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
HEXFET㈢ POWER MOSFET THRU-HOLE (TO-39) 20V, N-CHANNEL
|
IRF[International Rectifier]
|
