| PART |
Description |
Maker |
| MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT
IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| GP1600FSS12 |
Powerline N-Channel Single Switch IGBT Module Advance Information 2100 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| GP1201FSS18 |
Single Switch Low V IGBT Module 1200 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| 1MBC03-120 |
Fuji Discrete Package IGBT 5 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
http://
|
| IRG4PSH71KD |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Copack IGBT in a TO-274AA package
|
International Rectifier
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| SEMIX553GAR128DS09 SEMIX553GAR128DS-09 |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
