PART |
Description |
Maker |
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
IP2002 IP2002TR |
Synchronous Buck Multiphase Optimized BGA Power Block. Synchronous Buck Synchronous Buck Integrated Power Semiconductors/ Drivers & Passives
|
International Rectifier
|
IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM |
8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存) x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
IBM Microeletronics International Business Machines, Corp. Advanced Interconnections, Corp.
|
UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM x16 Fast Synchronous SRAM x18 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
74LVC163 74LVC163D 74LVC163DB 74LVC163PW 74LVC163P |
From old datasheet system Presettable synchronous 4-bit binary counter; synchronous reset
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
IRFH4210DPBF |
Synchronous Rectifier MOSFET for Synchronous Buck Converters
|
International Rectifier
|
HD74LV163A |
Synchronous 4-bit Binary Counter (Synchronous Clear)
|
HITACHI[Hitachi Semiconductor]
|
IRFH4209DPBF IRFH4209DPBF-15 |
Synchronous Rectifier MOSFET for Synchronous Buck Converters
|
International Rectifier
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families x32 Fast Synchronous SRAM 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM) 256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|