| PART |
Description |
Maker |
| FMMT38CTA |
TRANS DARL NPN 60V 300MA SOT-23
|
ZETEX PLC
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| STN2NF06 |
N-CHANNEL 60V - 0.12 OMH - 2A SOT-223 STRIPFET MOSFET
|
ST Microelectronics
|
| IRFL9014TR |
-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| STN2NF06 6080 |
From old datasheet system
N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| VAM40 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 12A I(C) | SOT-121VAR
40 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz
|
GHZTECH[GHz Technology]
|
| 1N5392-T3 1N5392-TB 1N5399-T3 1N5399-TB 1N5398-TB |
RECT SCHOTTKY 60V 3A POWERMITE3
1.5A SILICON RECTIFIER 1.5A的整流硅
DIODE DUAL SW 75V 350MW SOT-23 1.5A的整流硅
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| 2SD1480P |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|的SOT - 186
|
Toshiba, Corp.
|
| 2SB949P |
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | SOT-186 晶体管|晶体管|达林顿|进步党| 60V的五（巴西）总裁|甲一（c）|的SOT - 186
|
Amphenol, Corp.
|
| ZXMS6002GTA ZXMS6002G |
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET
1.6 A, 60 V, 0.675 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA SOT-223, 4 PIN
|
Diodes, Inc.
Diodes Incorporated
Diodes Inc.
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
