| PART |
Description |
Maker |
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| MCC44 MCC44-08IO1B MCC44-08IO8B MCC44-12IO1B MCC44 |
Thyristor Modules Thyristor/Diode Modules 80 A, 1800 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 1600 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 1200 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 800 V, SCR, TO-240AA
Thyristor Modules Thyristor/Diode Modules 80 A, 1400 V, SCR, TO-240AA
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| MG50N2CK1 |
TRANSISTOR MODULES
|
Toshiba
|
| MG15N2Y MG150G2YK1 MG150M2YL1 MG25M2YK1 MG25G2YK1 |
TRANSISTOR MODULES
|
ETC[ETC]
|
| MDI550-12A4 MID550-12A4 |
1200V IGBT module
IGBT Modules Short Circuit SOA Capability Square RBSOA
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| MLO110 MLO110-08IO7 MLO110-12IO7 MLO110-14IO7 MMO1 |
AC Controller Modules 81 A, 800 V, SCR
AC Controller Modules 81 A, 1400 V, SCR
AC Control Modules: AC Control Modules
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RN2112FT RN2113FT |
IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
