PART |
Description |
Maker |
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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V62C2164096 V62C2164096LL-70T |
256K X 16 STANDARD SRAM, 70 ns, PDSO44 256K x 16 0.17 um CMOS STATIC RAM 256K x 16, 0.17 um CMOS STATIC RAM
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MOSEL-VITELIC MOSEL[Mosel Vitelic Corp] MOSEL[Mosel Vitelic, Corp]
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K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
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IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位) Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28 Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位) CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28 Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位) CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28 CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28 Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70 Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70 1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70 Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85 Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75 CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technology, Inc. IDT[Integrated Device Technology] Integrated Device Technolog...
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IDT71256SA12PZ IDT71256SA12T IDT71256SA12TP IDT712 |
CMOS STATIC RAM 256K (32K x 8-BIT)
|
Integrated Device Technology IDT
|
IDT71V416S IDT71V416S15Y IDT71V416S20Y IDT71V416S1 |
3.3V CMOS STATIC RAM 4 MEG (256K x 16-BIT)
|
Integrated Device Techn... IDT[Integrated Device Technology]
|
IDT71V416S15PHI |
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
|
Integrated Device Techn...
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IDT71028 IDT71028S12Y IDT71028S15Y IDT71028S17Y ID |
CMOS STATIC RAM 1 MEG (256K x 4-BIT)
|
IDT[Integrated Device Technology]
|
TC55V400XB-70 TC55V400FT-85 TC55V400FT-70 |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|
KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EDI8L32256V15AI EDI8L32256V12AC EDI8L32256V15AC ED |
15ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM 12ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM 17ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
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White Electronic Designs
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