| PART |
Description |
Maker |
| CPH6519 |
NPN NPN
NPN Epitaxial Planar Silicon Composite Transistors Low-Frequency General-Purpose Amplifier, Driver Applications
|
Sanyo Semicon Device
|
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
| 2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN SILICON TRANSISTORS NPN硅三极管
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五（巴西）总裁| 200mA的一（c）|06
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| FZT491 FZT491A |
NPN Low Sat Transistor
NPN Med Power Transistor
SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
Style:Wall Mount Receptacle; Insert Arrangement:18-11
|
Zetex Semiconductors
Diodes Incorporated
|
|
