| PART |
Description |
Maker |
| FA5301 FA5301BP FA5301BPN FA5301BN |
Bipolar IC for switching power supplay control
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| MJE18204-D |
SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
ON Semiconductor
|
| MJE13007-P |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| 2SD2115 2SD2115L 2SD2115S |
Bipolar power switching transistor
Silicon NPN Epitaxial Planar(Low frequency power amplifier)
|
HITACHI[Hitachi Semiconductor]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| MJE13009-Q MJE13009G-Q-TA3-T MJE13009L-Q-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING APPLICATIONS
|
Unisonic Technologies
|
