PART |
Description |
Maker |
CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|
IC43R16160-7TG IC43R16160-6TG |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM 4米16位4个银行(256兆)DDR SDRAM内存
|
Panasonic, Corp.
|
CY7C1166V18 CY7C1166V18-300BZC CY7C1166V18-300BZI |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1568KV18-400BZC CY7C1568KV18-400BZXC CY7C1568K |
72-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
CY7C11661KV18 CY7C11681KV18 CY7C11681KV18-400BZC C |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1170KV18-400BZXC |
18-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress
|
CY7C1166V18-300BZXC CY7C1166V18-333BZXC |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
RMQCHA3636DGBA-15 |
36-Mbit DDR?II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
|
Renesas Electronics Corporation
|
CY7C21701KV18 CY7C21701KV18-400BZXC |
18-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
RMQCLA3636DGBA-15 |
36-Mbit DDR?II SRAM 2-word Burst Architecture (2.0 Cycle Read latency) with ODT
|
Renesas Electronics Corporation
|
CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165 72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|