| PART |
Description |
Maker |
| HA-2620 HA-2626 HA-2625 |
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=0.5mV
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Rad-Hard
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=3.0mV
|
Intersil
|
| HA2-2620-2 HA2-2625-5 |
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers
|
Intersil Corporation
|
| 5962F9751201V9A 5962F9751201VXC HS9-22620RH-Q HS0- |
Rad Hard Dual/ Wideband/ High Input Impedance Uncompensated Operational Amplifier
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier
|
Intersil Corporation
|
| 2SK246 E001482 |
FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
From old datasheet system
|
Toshiba
|
| 2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| CA2830C CA2830 |
RF/Coaxial Connector; RF Coax Type:N; Contact Termination:Crimp or Solder; Impedance:50ohm; Body Style:Straight Plug; RG Cable Type:9, 9A, 9B, 214
34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
|
Motorola, Inc.
|
| HA2-2525-5ZR5254 |
20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers
|
Intersil Corporation
|
| SGL60N90D |
IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)
|
FAIRCHILD[Fairchild Semiconductor]
|
| AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| HA3-2839-5 HA3-2839-9 HA-2839_883 FN3593 HA1-2839- |
From old datasheet system
Very High Slew Rate, Wideband Operational Amplifier
600MHz, Very High Slew Rate Operational Amplifier
Very High Slew Rate,
Wideband Operational Amplifier(高转换率、宽带运算放大器)
Very High Slew Rate/ Wideband Operational Amplifier
600MHz/ Very High Slew Rate Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
