| PART |
Description |
Maker |
| KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
| V54C3128804VS V54C3128404VS V54C3128804VT |
128Mbit SDRAM 3.3 VOLT/ TSOP II / SOC PACKAGE 8M X 16/ 16M X 8/ 32M X 4
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4 128Mbit SDRAM.3伏，第二的TSOP / SOC的包米1616米x 82 × 4
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
|
| K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S2816 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D2816 |
128Mbit DDR SDRAM 128Mbit DDR SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
