PART |
Description |
Maker |
KID65081AF KID65081AP KID65082AF KID65082AP KID650 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (8 HIGH-VOLTAGE HIGH-CURRENT DARLING TON TRANSISTOR ARRAYS) 双极线性集成电路(8个高电压高电流达林震晶体管阵列) Darlington Driver
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KEC Holdings KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
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1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V,稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电2V的,稳定电流一十一点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V,稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定(稳定电压均.9V,稳定电流六十四毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V,稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V,稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.1V,稳定电8毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压,稳定电流21毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V,稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电5V的,稳定电流三点三毫安的硅功率齐纳二极管 Silicon Power Z-Diodes 硅功率Z -二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电3V的,稳定电流十九毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V,稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电0V的,稳定电流十二点五毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电流三一毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V,稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.2V,稳定电1毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V,稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定(稳定电.6V的稳定电9毫安的硅功率齐纳二极管) Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V,稳定电3mA的硅功率齐纳二极 Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V,稳定电9mA的硅功率齐纳二极 From old datasheet system Silicon Power Z?Diodes
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Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. TFUNK[Vishay Telefunken]
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
BD438 ON0195 BD442 BD440 |
RH Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 05V; Power: 1W; Safety standards and approval: EN POWER TRANSISTORS PNP SILICON From old datasheet system 4.0 AMPERES POWER TRANSISTORS Plastic Medium Power Silicon PNP Transistor
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS Complemetary Silicon Power Transistors(互补硅功率晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
|
BD237 ON0191 |
From old datasheet system POWER TRANSISTORS NPN SILICON Plastic Medium Power Silicon NPN Transistor CASE 77-09 TO-225AA TYPE
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MJ15003 MJ15004 ON1980 |
From old datasheet system 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS POWER TRANSISTORS COMPLEMENTARY SILICON 20 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
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MOTOROLA INC MOTOROLA[Motorola, Inc] ON Semiconductor
|
2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806 |
Low frequency power amplification Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
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NTE[NTE Electronics]
|
BUV21 BUV21_D ON0257 |
From old datasheet system 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc. ON Semiconductor
|
2SB1430 |
Silicon power transistor PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
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NEC[NEC]
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