PART |
Description |
Maker |
KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28 65,536-Bit (8192 x 8) CMOS EPROM 64KBit (8192 x 8) CMOS EPROM [Life-time buy]
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Fairchild Semiconductor, Corp.
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GM76C88-10 GM76C88-85 GM76C88-70 GM76C88 |
8,192 X 8 BIT STATIC RAM 8192 x 8 Bit SRAM
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List of Unclassifed Manufacturers ETC GoldStar
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UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
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M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word8位)的CMOS静态RAM 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM 262144-bit (32768 x 8-bit) CMOS static RAM, 85ns 262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
TC55V1664BJ-12 TC55V1664BFT-10 |
64K Word x 16 Bit CMOS Static RAM(64Kx 16 CMOS 静RAM) 64K Word x 16 Bit CMOS Static RAM(64K瀛?x 16 浣?CMOS ???RAM)
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Toshiba Corporation
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IC62VV51216LL IC62VV51216L IC62VV51216L-70B IC62VV |
512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM
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ICSI[Integrated Circuit Solution Inc]
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IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
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KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power 8K x 8 bit Low Power CMOS Static RAM 8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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