| PART |
Description |
Maker |
| M48Z129V M48Z129V-70PM1 M48Z129V-85PM1 M48Z129VPM |
3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM 3.3V/5V兆位的SRAM 128KB的x8 ZEROPOWER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM
8ns 128K x 16 2Mb asynchronous SRAM
10ns 128K x 16 2Mb asynchronous SRAM
12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
| C3900AV C350AVB C540AVB C2301AVM |
256Kbit (32Kbit X 8) ZEROPOWER® SRAM
HEX SCHMITT TRIGGERS
256Kbit (32Kbit X 8) ZEROPOWER® SRAM 专用集成电路
Turbo 2 ultrafast high voltage rectifier 专用集成电路
|
Motorola Mobility Holdings, Inc.
|
| M4Z32-BR00SH1 M4Z32-BR00SH6 M4ZXX-BR00SH M4Z28-BR0 |
ZEROPOWER SNAPHAT (Battery)
ZEROPOWER SNAPHAT Battery
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor ZEROPOWER SNAPHAT电池
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb
x16 SRAM
|
Hynix Semiconductor
|
| IS61NVP102436A IS61NVP102436A-166B3 IS61NVP102436A |
1Mb x 36 and 2Mb x 18 STATE BUS SRAM
1M X 36 STANDARD SRAM, PBGA165 PLASTIC, BGA-165
1M X 36 STANDARD SRAM, PDSO100 TQFP-100
2M X 18 STANDARD SRAM, PBGA165
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
|
| M48Z512A-85PM1 M48Z512AY-85PM1 M48Z512A-70PM1 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
SGS Thomson Microelectronics
|
| M48Z5807 M48Z58Y-70MH1F M48Z58Y-70PC1F M48Z58Y-70M |
5V, 64Kbit (8Kbit x 8) ZEROPOWER SRAM
|
STMicroelectronics
|
| M48Z128Y-70PM1 M48Z128Y-85PM1 M48Z128-70PM1 |
1 MBIT (128KB X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| C4123 C5334 C4124 C4133 C4323 C4134 C4324 C3323 C1 |
MEMS digital output motion sensor ultra low-power high performance 3-axes "nano" accelerometer
18-STAGE STATIC SHIFT REGISTER
MEMS digital output motion sensor ultra low-power high performance 3-axes nano accelerometer
MEMS inertial sensor 3-axis ultracompact linear accelerometer
MEMS inertial sensor: 3-axis - ± 2g/± 6g digital output low voltage linear accelerometer
LOW DROP POWER SCHOTTKY RECTIFIER
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions
Memory tag IC at 13.56 MHz, with 64-bit unique ID and WORM user area, ISO 15693 and ISO 18000-3 Mode 1 compliant
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
Turbo 2 ultrafast high voltage rectifier
5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM
Dual decade counter
3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM
Analog multiplexer/demultiplexer with address latch : single 8 channel
5.0V or 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Quad bilateral switch
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER® SRAM
Dual J-K flip flop with preset and clear
4-bit magnitude comparator
2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant
MEMS inertial sensor: 3-axis - /-2g/6g ultracompact linear accelerometer 光电
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory 光电
|
NXP Semiconductors N.V.
STMicroelectronics N.V.
|
| M48Z35Y-70MH6 M48Z35Y-70MH6E M48Z35Y-70MH6F M48Z35 |
256 Kbit (32Kbit X 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M48Z35 |
256 Kbit 32Kb x8 ZEROPOWER SRAM
|
STMicroelectronics
|
