| PART |
Description |
Maker |
| UPD6500X |
3-Micron CMOS Gate Arrays
|
NEC Electronics
|
| QL4058-2PQ208C QL4058-2PQ208I QL4058-4PQ240M QL405 |
58,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
|
ETC[ETC]
|
| ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools.
|
Atmel
|
| QL4016-4PLM QL4016 QL4016-0CF100C QL4016-0CF100I Q |
16/000 Usable PLD Gate QuickRAM ESP Combining Performance/ Density and Embedded RAM
GT 19C 19#16 SKT RECP
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:19; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Square Flange Receptacle; Body Style:Straight
GT 4C 4#16 SKT RECP
16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM 16000可用门QuickRAM ESP PLD的结合性能，密度和嵌入式内
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| IDD08870 |
Usable bandwidth 25 MHz each Rx And Tx. band
|
Integrated Technology F...
|
| IDD08273 |
Usable bandwidth 5 MHz each Rx And Tx. band
|
Integrated Technology F...
|
| IDD08808 |
Usable bandwidth 25 MHz Rx. And 65MHz Tx. band
|
Integrated Technology F...
|
| N25Q128A11ESE40G |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| M29F800FB55N3E2 |
Micron Parallel NOR Flash Embedded Memory
|
Micron Technology
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
