| PART |
Description |
Maker |
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| RJQ6022DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJQ6021DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC5865TLR |
High voltage discharge, High speed switching, Low Noise (60V, 1A)
|
Rohm
|
| RJK5035DPP-E0 |
500V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SA1292 |
60V/15A High-Speed Switching Applications
|
Sanyo Semicon Device
|
| RJK0629DPE RJK0629DPE-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| RJK0629DPN RJK0629DPN-00-T2 RJK0629DPN-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| RJK0658DPA-00-J5A RJK0658DPA13 |
60V, 25A, 11.1m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SA1615-Z 2SA1615-ZK 2SA1615L 2SA1615-ZL 2SA1615 |
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-252AA
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-251AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC[NEC]
NEC Corp.
|
| RJL6012DPE RJL6012DPE-00J3 RJL6012DPE-12 RJL6012DP |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
