PART |
Description |
Maker |
AT31625 |
NPN Common Emitter Medium Power Output Transistor
|
Hewlett-Packard
|
AT-31625 AT-31625-BLK AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-33225-BLK AT-33225-TR1 AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS/ ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones 4.8 V NPN Common Emitter Output Power Transistor for AMPS ETACS Phones
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor 50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3.7AI(丙)|的SOT - 324VAR 500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology] MICROSEMI POWER PRODUCTS GROUP
|
Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion) NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion) From old datasheet system NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... Microsemi, Corp.
|
FF300R12KT3E |
62mm C-series module with common emitter
|
Infineon Technologies AG
|
TD62553SG |
Single-transistor array (common-emitter)
|
TOSHIBA
|
UMA5N FMA5A EMA5 |
Emitter common (dual digital transistors)
|
Rohm CO.,LTD. ROHM[Rohm] Filtronic Compound Semiconductors
|
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|