| PART |
Description |
Maker |
| CY7C4255V-10ASC CY7C4265V-10ASC |
32K/64Kx18 Low Voltage Deep Sync FIFOs
|
Cypress Semiconductor
|
| CY7C4271V-15JC CY7C4271V-15JI CY7C4271V-25JC CY7C4 |
16Kx9 Low Voltage Deep Sync FIFOs(16Kx9低压深同步先进先出（FIFO
16K/32K/64K/128K x 9 Low-Voltage Deep Sync⑩ FIFOs
16K/32K/64K/128K x 9 Low-Voltage Deep Sync FIFOs
16K/32K/64K/128K x 9 Low-Voltage Deep Sync?/a> FIFOs
16K/32K/64K/128K x 9 Low-Voltage Deep Sync?FIFOs
|
Cypress Semiconductor Corp.
|
| 7C4282V/92V-15 7C4282V/92V-10 7C4282V/92V-25 |
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion
64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion 64K/128Kx9低电压后同步FIFO的瓦重发
|
Cypress Semiconductor Corp.
|
| IC62LV256 IC62LV256-70UI IC62LV256-100J IC62LV256- |
45ns; 3.3V; 32K x 8 low voltage static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
32K x 8 Low Power SRAM with 3.3V 32K的8低功耗SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Hitachi,Ltd.
Cypress Semiconductor, Corp.
|
| UPD42S16400G5-60-7JD UPD42S16400G5-60-7KD UPD42S16 |
32K x 8 Magnetic Nonvolatile CMOS RAM
8K/16K x 18 Deep Sync FIFOs
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Maxim Integrated Products, Inc.
|
| CY7C4282V03 CY7C4282V-10ASC CY7C4282V-15ASC CY7C42 |
Memory : FIFOs
64K/128K x 9 Low-Voltage Deep Sync FIFOs with Retransmit and Depth Expansion
|
Cypress Semiconductor
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| IS65LV256AL12 |
32K x 8 LOW VOLTAGE CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS61C256 |
32K x 8 Low Voltage CMOS STATIC RAM
|
Integrated Silicon Solution
|
| P80C32X2 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage (2.7 to 5.5 V), low power, high speed (30/33 MHz)
|
Philips
|
| 87C38X2 87C34X2 87C32X2 87C31X2 80C31X2 P87C52 P87 |
80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
|
Philips Semiconductors
NXP
|
| BS62LV256S BS62LV256TC BS62LV256SC BS62LV256TI BS6 |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
