PART |
Description |
Maker |
GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
GN01100B |
GaAs IC (with built-in ferroelectric)
|
Panasonic Semiconductor
|
EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
UN911CJ UN911BJ UN9118 UNR9118 UN9110 UNR9110 UN91 |
UNR911X Series (UN911X Series) - PNP Transistor with built-in Resistor 3 to 5.5 V, low power, up to 400 kbps RS-232 drivers and receivers Transistors with built-in Resistor
|
Matsshita / Panasonic
|
SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
CF750 Q62702-F1391 |
From old datasheet system GaAs MMIC (Biased Dual Gate GaAs FET) 砷化镓微波单片集成电路(偏置双门砷化镓场效应管)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
TG2213S |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG Panasonic
|
TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|