| PART |
Description |
Maker |
| IRF7521D1 |
FETKY MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)
FETKY? MOSFET / Schottky Diode
FETKY⑩ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| IRL3103D2 |
FETKY?/a> MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
FETKY MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
FETKY⑩ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=54A)
|
IRF[International Rectifier]
|
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| IRF7807VD1 IRF7807VD1TR |
Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| FDFS2P102 FAIRCHILDSEMICONDUCTORCORP-FDFS2P102 FDF |
Integrated P-Channel MOSFET and Schottky Diode
FETKEY P-Channel MOSFET with Schottky Diode 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| NTLUF4189NZ NTLUF4189NZTAG NTLUF4189NZTBG |
Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package
|
ON Semiconductor
|
| IRF840S IRF840STRR IRF840STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
|
International Rectifier
|
| IRF7422D2 IRF7422D2TR |
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET & Schottky Diode TM
FETKY-TM MOSFET AND Schottky Diode
|
IRF[International Rectifier]
|
| IRF7807D2PBF |
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
