| PART |
Description |
Maker |
| K7Q161862 K7Q161862B K7Q163662B |
512Kx36 & 1Mx18 QDRTM b2 SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
| K7Q163682A K7Q161882 K7Q161882A |
512Kx36 & 1Mx18 QDR b2 SRAM 512Kx36
512Kx36 & 1Mx18 QDR b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7M161835B |
512Kx36 & 1Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
| K7P161866A K7P161866A-HC25 K7P161866A-HC30 K7P1618 |
512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| K7M161825M |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|
| K7P161866A K7P163866A |
(K7P161866A / K7P163866A) 512Kx36 AND 1Mx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| K7I323682M K7I321882M K7M161825A-QCI65 |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
