| PART |
Description |
Maker |
| K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V689 |
64Kx36 Synchronous SRAM
|
Samsung semiconductor
|
| KM736V689A |
64Kx36 Synchronous SRAM
|
Samsung semiconductor
|
| K7A203200B K7A203600B-QCI14 K7A203200B-QC14 K7A203 |
64Kx36/x32 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM736V687A |
64Kx36-Bit Synchronous Burst SRAM(64Kx36位同步脉静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V695 |
64Kx36-Bit Synchronous Pipelined Burst SRAM(64Kx36位同步流水线脉冲 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM
x16 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
| GS820E32AQ-5I GS820E32AT-5I GS820E32AT/Q-150/138/1 |
64K x 32 2M Synchronous Burst SRAM
x32 Fast Synchronous SRAM X32号，快速同步SRAM
|
Electronic Theatre Controls, Inc.
Aeroflex, Inc.
|
| MT58LC64K32G1LG-5 MT58LC64K32G1LG-10 MT58LC64K32G1 |
x32 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Amphenol, Corp.
|
| GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
PROGRAMMER UNIVERSAL 40-PIN
64K x 32 / 2M Synchronous Burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器
PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器
.56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器
64K X 32 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
