| PART |
Description |
Maker |
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| EMD28164PA EMD28164PA-60 EMD28164PA-75 EMD28164PA- |
128M: 8M x 16 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| EDL1216CFBJ-75-F |
128M bits Mobile RAM
|
Elpida Memory
|
| MX25L12845EZNI10G MX25L12845E14 MX25L12845EMI10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L12835FMI10G MX25L12835FM2I10G MX25L12835FZ2I1 |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L12845E |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
http://
|
| MX25L12855E |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MBM29XL12DF-80 MBM29XL12DF MBM29XL12DF-70 E520901 |
From old datasheet system
PAGE MODE FLASH MEMORY CMOS 128M BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp.
PerkinElmer, Inc.
|
