| PART |
Description |
Maker |
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp.
PerkinElmer, Inc.
|
| MB82DBS04163C-70LWFKT |
MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word×16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| MB82DBS04163C MB82DBS04163C-70L MB82DBS04163C-70LW |
MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word】16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| A25LQ64 |
64M-BIT (x1 / x2 / x4) 3.3V CMOS MXSMIO
|
AMIC Technology
|
| MX29LV065B |
64M-Bit CMOS Flash Memory
|
Macronix
|
| MX25L6402AMI-40G MX25L6402AMC-40 MX25L6402A MX25L6 |
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
|
Macronix International
|
| MX28F640C3BTC-12 MX28F640C3BTC-90 MX28F640C3BXAC-1 |
64M-BIT [4M X16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
