| PART |
Description |
Maker |
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp.
PerkinElmer, Inc.
|
| MB82DP04183C-65LWFKT |
64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV065M |
64M-Bit CMOS Flash Memory
|
Macronix
|
| MX25L6402 MX25L6402MC-40 MX25L6402MC-40G |
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
|
MCNIX[Macronix International]
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| EDL6416CBBH-75-F EDL6416CBBH |
64M bits Mobile RAM垄芒
|
Elpida Memory
|
| MX25L6436E MX25L6436EM2I10G MX25L6436EZNI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L6439E MX25L6439EM2I10G |
64M-BIT [x 1 / x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K3N7VU4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| MX28F640C3BTTC-12 MX28F640C3BBTI-12 MX28F640C3BBTC |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
