| PART |
Description |
Maker |
| STD2NB80 6424 STD2NB80T4 |
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 1.9AI（四）|52AA
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| STD1NB80- STD1NB80-1 6190 STD1NB80 |
N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET
N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET
N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
N - CHANNEL 800V - 16 - 1A - IPAK PowerMESH TM MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB12NK80Z-S |
N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET N沟道800V 0.65ohm - 10.5A I2SPAK齐保护的SuperMESH功率MOSFET
N-CHANNEL MOSFET with FAST DIODE
N-CHANNEL 800V - 0.65 OHM - 10.5A I2SPAK ZENER-PROTECTED SUPERMESH™ MOSFET
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| STW12NK80Z |
CONNECTOR ACCESSORY
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 800V - 0.65ohm - 10.5A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 800V - 0.65 OHM - 10.5 A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
| FQB6N80 FQI6N80 FQB6N80TM |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQB2N80 FQI2N80 FQB2N80TM FQI2N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STP5NB80 STP5NB80FP 6418 |
From old datasheet system
N - CHANNEL 800V - 1.8W - 5A - TO-220/TO-220FP
PowerMESH] MOSFET
N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STW9NC80Z 7287 |
N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH⑩III MOSFET
From old datasheet system
N-CHANNEL 800 V - 0.82 OHM - 9.4 A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
