| PART |
Description |
Maker |
| BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39
MAX 3000A CPLD 512 MC 208-PQFP
晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一c）| TO - 220AB现有
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五（巴西）总裁| 100mA的一（c）| TO - 39封装
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
| CDST-21-G CDST-21A-G CDST-21C-G CDST-21S-G |
Switching Diodes Array, V-RRM=250V, V-R=250V, P-D=225mW, I-F=200mA
|
Comchip Technology
|
| MJF47 |
Bipolar Power TO220FP NPN 1A 250V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
ON Semiconductor
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STS1C1S250 |
N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF644B IRFS644B IRF644 IRF644BFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRF644 & IRF644A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS624B IRF624B IRF624 IRF624BFP001 IRFS624BFP001 |
250V N-Channel B-FET / Substitute of IRFS624 & IRFS624A
250V N-Channel B-FET / Substitute of IRF624 & IRF624A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IDT74FST163245PA IDT74FST163245PF IDT74FST163245PV |
CAP 33UF 250V ELECT EB SMD
CAP 22UF 250V ELECT EB SMD
CAP 10UF 250V ELECT EB SMD
16-BIT BUS SWITCH
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| CSD1025 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| OP805SL OP800SL OP801SL OP802SL OP803SL OP804SL |
NPN Silicon Phototransistor(NPN光敏晶体管，窄接收角，集电极最小电.0mA,可替代OP800和K5251系列产品) PHOTO TRANSISTOR DETECTOR
NPN Silicon Phototransistors
|
TT electronics OPTEK Technology
OPTEK[OPTEK Technologies]
|
