| PART |
Description |
Maker |
| IRGTI050U06 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
|
|
| DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
|
| CM200DU12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 200安培我（丙）
|
Powerex, Inc.
|
| DIM250PHM33-TS000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| SIM75D06AV1 |
“HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
| SIM400D06AV3 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| BSM150GB170DN2E3166 150B17E2 C67070-A2709-A67 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| BSM100GB120DN2K 100B12K2 C67070-A2107-A70 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| GA200HS60S |
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package 600V的直千赫的廉政（标准）半桥IGBT à - Pak封装
HALF-BRIDGE IGBT INT-A-PAK
|
Ecliptek, Corp.
IRF[International Rectifier]
|
