
	Part Number	Hot Search : M5231 54SX32 IS42S16 TFS150T TFS400F CD4011 C494GS AT80F52
	Product Description
	Full Text Search

HY27US08121M - 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27US08121M_241740.PDF Datasheet

Part No.

HY27US08121M HY27US16121M HY27USXXX HY27SS08121M HY27SS16121M HY27SSXXX

Description

512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

File Size

723.19K / 43 Page

Maker

HYNIX[Hynix Semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY27US08121M

Maker: HY

Pack: TSOP

Stock: Reserved

Unit price for :

50: $8.31

100: $7.89

1000: $7.48

Email: oulindz@gmail.com

Contact us

Homepage

Download

[ HY27US08121M HY27US16121M HY27USXXX HY27SS08121M HY27SS16121M HY27SSXXX Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ HY27US08121M HY27US16121M HY27USXXX HY27SS08121M HY27SS16121M HY27SSXXX Datasheet PDF Downlaod from Datasheet.HK

]
[HY27US08121M HY27US16121M HY27USXXX HY27SS08121M HY27SS16121M HY27SSXXX Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for HY27US08121M ]

[ Price & Availability of HY27US08121M by FindChips.com ]

Full text search : 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

Related Part Number

PART	Description	Maker
H5MS5162DFR-K3M H5MS5162DFR-E3M H5MS5162DFR-J3M H5	512Mb (32Mx16bit) Mobile DDR SDRAM	Hynix Semiconductor
K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232	512Mbit GDDR3 SDRAM	SAMSUNG[Samsung semiconductor]
K4S510732B K4S510732B-TC1H K4S510732B-TC1L K4S5107	Stacked 512Mbit SDRAM	Samsung semiconductor
K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5	512Mbit gDDR2 SDRAM	SAMSUNG[Samsung semiconductor]
H5RS5223CFR-N0C H5RS5223CFR-11C H5RS5223CFR-14C H5	512Mbit (16Mx32) GDDR3 SDRAM	Hynix Semiconductor
K4Y50024UC K4Y50024UC-JCA2 K4Y50024UC-JCB3 K4Y5002	512Mbit XDR TM DRAM(C-die)	Samsung semiconductor
HYB25D512160BE-6 HYB25D512800BE-5 HYB25D512160BC-5	512Mbit Double Data Rate SDRAM	INFINEON[Infineon Technologies AG]
H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5	512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O	Hynix Semiconductor
M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8	512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM	STMicroelectronics
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	Numonyx B.V
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4	; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM 512Mbit gDDR2 SDRAM	http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104	32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic Samsung semiconductor

Related keyword From Full Text Search System

HY27US08121M voltage vgs	HY27US08121M terminals description	HY27US08121M heatsink	HY27US08121M Epitaxial	HY27US08121M Stereo
HY27US08121M gate threshold	HY27US08121M fet	HY27US08121M Dropout	HY27US08121M Marin	HY27US08121M Noise