| PART |
Description |
Maker |
| IRF252 IRF253 IRF250 IRF254 IRF251 IRFP251 IRFP253 |
HIGH VOLTAGE POWER MOSFET DIE N-CHANNEL ENHANCEMENT MODE HIGH RUGGEDNESS SERIES
|
IXYS[IXYS Corporation]
|
| GP50PF-1A |
50 AMP PRESS FIT HIGH VOLTAGE DIODES (GPP DIE)
|
Diodes Incorporated
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| IXFN80N50 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN340N07 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| IXFN280N07 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| S2206 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRFC240 |
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305 |
N-channel SiC power MOSFET bare die
|
Rohm
|
