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K4M563233D - 8Mx32 Mobile SDRAM 90FBGA

K4M563233D_241792.PDF Datasheet
 Full text search : 8Mx32 Mobile SDRAM 90FBGA

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K4M563233D 8Mx32 Mobile SDRAM 90FBGA
 SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L 16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
 SAMSUNG[Samsung semiconductor]
K4M51323LE-F1L K4M51323LE-L K4M51323LE-M K4M51323L 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 4米32Bit的4银行0FBGA移动SDRAM
 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
WED3DL328V10BC WED3DL328V10BI WED3DL328V8BC WED3DL 8Mx32 SDRAM
 WEDC[White Electronic Designs Corporation]
HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM 256M(8Mx32) GDDR SDRAM
 Hynix Semiconductor
HY5DU573222F-2 HY5DU573222F-22 HY5DU573222F-25 HY5 256M(8Mx32) GDDR SDRAM
 Hynix Semiconductor
K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ 2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
H5MS1G22MFP 1Gbit MOBILE DDR SDRAM
 Hynix Semiconductor
MT48LC16LFFG MT48H16M16LFBG MT48V16MLFFG (MT48xx16x16LFxG) 256M x 16 Mobile SDRAM
 Micron Technology
 
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K4M563233D server K4M563233D Switching K4M563233D vdd K4M563233D linear K4M563233D Positive
 

 

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