PART |
Description |
Maker |
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
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General Electric Solid State GE Solid State
|
PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
MRF1517T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
|
CMT20N503P CMT20N50 |
POWER FIELD EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers ETC[ETC]
|
27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
CMT01N6010 CMT01N60XN251 CMT01N60XN92 CMT01N60GN25 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp. Champion Microelectroni...
|
UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MRF7S35120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|