| PART |
Description |
Maker |
| MMBT2369A MMBT2369 |
Surface Mount Si-Epi-Planar Switching Transistors
|
Diotec Semiconductor
|
| MMBT2907A MMBT2907 |
Surface Mount Si-Epi-Planar Switching Transistors
|
Diotec Semiconductor
|
| MMBT5551 MMBT5550 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BC81707 BC817 BC818 |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BC859BW |
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BC807 BC808 |
Surface Mount General Purpose Si-Epi-Planar Transistors
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BCP55 BCP54 BCP56 BCP54-07 |
Surface Mount General Purpose Si-Epi-Planar Transistors
Surface Mount General Purpose Si-Epi-Planar Transistors
|
Diotec Semiconductor
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BFG93A BFG93A_X BFG93 BFG93A/X BFG93X |
NPN 6 GHz wideband transistors(NPN 6G赫兹 宽带晶体 npn GHz的宽带晶体管（npn型第六代赫兹宽带晶体管）
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| MPSA05 MMBTA05 MPSA05RA |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Medium Power Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
