| PART |
Description |
Maker |
| A43L1632V-6 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMIC Technology Corporation
|
| HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
| A43L1632V-6 A43L1632V-7 A43L1632 |
512K X 32 Bit X 4 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| M32L32321SA M32L32321SA-5.5F M32L32321SA-5.5Q M32L |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
| M32L32321SA-5.5F M32L32321SA-5.5Q M32L32321SA-5F M |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| HY57V161610ETP-I HY57V161610ETP-5I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 200MHz
|
HYNIX[Hynix Semiconductor]
|
| A43L0632G-6F A43L0632G-7F A43L0632G-6UF A43L0632G- |
512K X 32 Bit X 2 Banks Synchronous DRAM 12k × 32位2银行同步DRAM
|
AMIC Technology Corporation
http://
AMIC Technology, Corp.
TM Technology, Inc.
|
| M12L64322A-7T M12L64322A-6T |
512K x 32 Bit x 4 Banks Synchronous DRAM
PT 5C 5#16 SKT RECP
|
Electronic Theatre Controls, Inc.
|
| IC42S16101 IC42S16101-5BG IC42S16101-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
