| PART |
Description |
Maker |
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS
DC-DC Converters Switching Voltage Regulators Motor Drivers
MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
| NP82N04MUG NP82N04NUG NP82N04MUG-S18-AY NP82N04NUG |
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
| 2SK3479-Z-E1-AZ 2SK3479-15 |
SWITCHING N-CHANNEL POWER MOS FET
MOS FIELD EFFECT TRANSISTOR
|
Renesas Electronics Corporation
|
| UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
| 2SK1310 |
N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER)
|
Toshiba Semiconductor
|
