| PART |
Description |
Maker |
| BS829 |
DMOS Transistors (P-Channel)(P???DMOS?朵?绠?
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| 2N7002 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| VN0550N3-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 50 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
| DN2535N3-G DN2535N5-G |
N-Channel Depletion-Mode Vertical DMOS FETs 0.5 A, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Supertex, Inc.
|
| 2N7000-G |
N-Channel Enhancement-Mode Vertical DMOS FETs 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Supertex, Inc.
|
|
