| PART |
Description |
Maker |
| RN5006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN6006 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3422 E000844 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER/ LOW SPEED SWITCHING)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC2133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
| 2SC2166 |
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
|
Mitsubishi Electric Corporation
|
| 2SC3133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
|
Mitsubishi Electric Corporation
|
