PART |
Description |
Maker |
FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60 |
600V N-Channel SuperFET 600V N-Channel MOSFET From old datasheet system
|
Fairchild Semiconductor
|
FCPF380N60E152 |
N-Channel SuperFET II MOSFET 600V, 10.2A, 380mOhms
|
Fairchild Semiconductor
|
FCP190N65S3 |
N-Channel SuperFET MOSFET
|
ON Semiconductor
|
FCP190N60-GF102 |
N-Channel SuperFET? II MOSFET
|
Fairchild Semiconductor
|
FCH104N60 |
N-Channel SuperFET? II MOSFET N-Channel SuperFET II MOSFET
|
Fairchild Semiconductor
|
FCPF7N60 |
N-Channel SuperFET MOSFET
|
Fairchild Semiconductor
|
FCPF190N60E-ND |
FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ
|
Fairchild Semiconductor
|
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics STMicroelectronics 意法半导
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET From old datasheet system N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|