| PART |
Description |
Maker |
| W28F641B |
64MBIT (4MBIT 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond Electronics Corp
|
| HYB39S64800BT HYB39S64400BT HYB39S64XXX0BTL |
64MBit Synchronous DRAM(64M4× 2M× 8)同步动态RAM)
64MBit Synchronous DRAM(64M4× 4M× 4)同步动态RAM)
64MBitSynchronous DRAM(64M位同步动态RAM(低功耗版))
|
SIEMENS AG
|
| K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 |
64Mbit DDR SDRAM 64Mb的DDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M28W640FSU M28W640FSU-ZA M28W640FSU-ZAE M28W640FSU |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| YG962S6R |
SILICON DIODE
IC, FLASH, X8, 64MBIT, 8MB, 3V, TSOP
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| M76DW63000A90ZT M76DW62000A M76DW62000A70ZT M76DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 8Mbit/4Mbit SRAM, 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| IS41LV85125B-60K IS41LV85125B-60KL IS41LV85125B |
512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| IS41LV16257B-35K IS41LV16257B-35T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solution, Inc.
|
| HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HY |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
SIEMENS AG
Infineon Technologies AG
http://
|
