| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ548 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ518 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| 2SK3289 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ588 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3378ENTL-E 2SK3378ENTR-E 2SK3378 |
Silicon N Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ586 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3289 |
Silicon N Channel MOS FET High Speed Switching
|
Hitachi Semiconductor
|
| 3SK290 |
Silicon N Channel MOS FET
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
