| PART |
Description |
Maker |
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5V32R16J-12 M5M5V32R16J-10 M5M5V32R16J-15 M5M5V |
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
524288-BIT CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5W816TP-70HI M5M5W816TP-85HI |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5W816WG-85LI M5M5W816WG-10H M5M5W816WG-10HI M5M |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
|
| M5M5V408BFP M5M5V408BKR M5M5V408BKV M5M5V408BRT M5 |
From old datasheet system
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5T5636G M5M5T5636GP-20 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V5636GP-16 M5M5V5636GP16 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M5Y5636TG-20 M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| M5M5V408BTP-70HI M5M5V408BTP-85H M5M5V408BTP-85HI |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| MSM56V16160F |
2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
|
