PART |
Description |
Maker |
APT4016BVR |
POWER MOS V 400V 27A 0.160 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
RJK4002DPH-E0 RJK4002DPH-E0T2 |
400V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK4036DP3-A0 |
400V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK4012DPE-12 RJK4012DPE-15 RJK4012DPE-00J3 |
400V - 15A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
|
STMicroelectronics
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
|
IRC730 |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)
|
IRF[International Rectifier]
|
PS7241-2A PS7241-2A-A PS7241-2A-F3 PS7241-2A-F4-A |
8-PIN SOP, 400V BREAK DOWN VOLTAGE 2-ch Optical Coupled MOS FET
|
California Eastern Laboratories CEL[California Eastern Labs]
|
604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
|
Rochester Electronics, LLC
|
SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|