| PART |
Description |
Maker |
| 2SC5754 2SC5754-T2 |
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NEC
|
| NESG220034-A NESG220034-T1 NESG220034-T1-A NESG220 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
| UPA901TU-T3-A UPA901TU UPA901TU-A UPA901TU-T3 |
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
|
NEC[NEC]
|
| FA1A4ZL69-T1B FA1A4ZL67-T1B FA1A4ZL68-T1B |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
3M Company
|
| EDZTE-175.6B EDZTE-176.8B |
5.6 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MINIMOLD, EMD2, SC-79, 2 PIN
6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MINIMOLD, EMD2, SC-79, 2 PIN
|
NXP Semiconductors N.V.
|
| 2SC3356 |
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
|
California Eastern Labs
|
| 2SC4957-15 2SC4957-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC5746 2SC5746-T3 2SC5746NE819M13 |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|
NEC
|
| 2SC5012-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp.
NEC[NEC]
|
