PART |
Description |
Maker |
IC41C16257S-35T IC41C16257S-60TI IC41LV16257S-50K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K × 16兆位)充满活力和快速页面模式内 CONNECTOR ACCESSORY
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Integrated Circuit Solution Inc Electronic Theatre Controls, Inc. Integrated Circuit Solu...
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IS41LV16256B-35KL IS41LV16256B-60T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
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Integrated Silicon Solu... Integrated Silicon Solution, Inc.
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HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
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SIEMENS AG
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MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存) CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
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Fujitsu Limited Fujitsu, Ltd.
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HYB514265BJ-45 HYB514265BJ-40 HYB514265BJ-400 HYB3 |
256K x 16-Bit EDO-Dynamic RAM 256K x 16位江户动态随机存储器
|
http:// SIEMENS AG
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T224160B T224160B-30 T224160B-35 T224160B-45 T2241 |
256K x 16 DYNAMIC RAM FAST PAGE MODE 256K × 16动态RAM快速页面模 Binary Coded Rotary DIP Switches
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TM Technology, Inc. TMT[Taiwan Memory Technology]
|
CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
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CY62147EV30LL-45BVXA CY62147EV30LL-45BVXI CY62147E |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
|
Cypress Semiconductor Corp.
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
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KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
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Samsung Electronic
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