| PART |
Description |
Maker |
| KBPC108 KBPC1005 KBPC101 KBPC102 KBPC104 KBPC106 K |
3A,6A single phase rectifier bridges
3 A Single Phase Rectifier Bridges(3A 单向整流器桥) 三单相整流桥3A条单向整流器桥）
6 A Single Phase Rectifier Bridges(6A 单向整流器桥)
1000V Bridge in a D-72 package
800V Bridge in a D-72 package
600V Bridge in a D-72 package
400V Bridge in a D-72 package
200V Bridge in a D-72 package
50V Bridge in a D-72 package
1000V Bridge in a D-46 package
600V Bridge in a D-46 package
400V Bridge in a D-46 package
200V Bridge in a D-46 package
100V Bridge in a D-46 package
50V Bridge in a D-46 package
800V Bridge in a D-46 package
6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Vishay Siliconix
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| CAT24FC65GLI-TE13 CAT24FC66ZD2I-TE13 CAT24FC65 CAT |
LM5105 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10
LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay; Package: LLP; No of Pins: 10
Silver Mica Capacitor; Capacitance:1300pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY 连接器附
64K-Bit I2C Serial CMOS EEPROM with Partial Array Write Protection 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: LLP; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:5; Connector Shell Size:14S; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Socket; Gender:Female 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5107 100V / 1.4A Peak Half Bridge Gate Driver; Package: SOIC NARROW; No of Pins: 8 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time; Package: MINI SOIC; No of Pins: 10 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
WASHER & NUT KIT for PDB181 MODEL 64K的位I2C串行CMOS EEPROM，带有部分阵列写保护
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http://
CATALYST[Catalyst Semiconductor]
Vishay Intertechnology, Inc.
BCD Semiconductor Manufacturing, Ltd.
NXP Semiconductors N.V.
Motorola Mobility Holdings, Inc.
Cooper Bussmann, Inc.
Microchip Technology, Inc.
|
| HIP2106 HIP2106IB HIP2106IP |
100V/1A Peak/ Low Cost/ High Frequency Half Bridge Driver
100V/1A Peak Low Cost High Frequency Half Bridge Driver
100V/1A Peak, Low Cost, High Frequency Half Bridge Driver CONTROL(100V/1A 峰低成高频半桥驱动控制) 100V/1A山顶，低成本，高频率的一半桥驱动器控制（100V/1A峰值，低成本，高频半桥驱动控制
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HIP2101IB HIP2101IBZ HIP2101IRZ HIP2101IR4 HIP2101 |
100V/2A Peak/ Low Cost/ High Frequency Half Bridge Driver
100V/2A Peak, Low Cost, High Frequency Half Bridge Driver
100V/2A Peak Low Cost High Frequency Half Bridge Driver
Driver, Half Bridge, 100V/2A Peak, TTL Inputs, High Frequency, Drives N-Channel
|
INTERSIL[Intersil Corporation]
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| AM29F200BB-45EC AM29F200BB-120FC AM29F200BB-70FC A |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ44VZL with Lead-Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU1010Z with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRL2910 in lead free packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3705N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF3205L with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR2307Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU7807ZCPBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF530NS with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU1205 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF530NS with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB61N15D with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF2805S with Lead-Free packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFSL33N15D with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3717 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7463 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU2705 with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7457 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package; Similar to IRF1405ZL-7P with Lead Free packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF540NL with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR7811WCPBF with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS23N20D with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7834 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR4105Z with Lead Free Packaging
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3714 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF8010S with Lead-Free packaging.
100V Single N-Channel Automotive HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3710Z with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3205PBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF3710Z with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFSL17N20D with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFSL23N15D with Lead Free Packaging
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRHF8130 IRHF3130 IRHF4130 IRHF7130 JANSF2N7261 JA |
30V N-Channel PowerTrench MOSFET
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
IRF[International Rectifier]
|
| JANSF2N7389 IRHF9130 IRHF93130 JANSR2N7389 |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
| IRHG7110 IRHG8110 IRHG3110 IRHG4110 IRHG8110N IRHG |
Simple Drive Requirements
100V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
100V Quad N-Channel MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
100V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
|
IRF[International Rectifier]
http://
|
| 1BQ40 1BQ20 |
1A SINGLE PHASE D.I.L SCHOTTKY BRIDGE
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package
1 A, 40 V, SILICON, BRIDGE RECTIFIER DIODE
DIODE 1 A, 20 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DIP-4, Bridge Rectifier Diode
|
IRF[International Rectifier]
Vishay Semiconductors
|
