| PART |
Description |
Maker |
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
| 2SK2568 |
12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
Transistors>Switching/MOSFETs
|
Renesas
|
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
| BC807 BC327 BC807W BC327T/R BC807-25W/T3 BC807-40. |
45 V, 500 mA PNP general-purpose transistors
500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| ZHL-5W-1 |
50High Power 5 to 500 MHz
50Ω High Power 5 to 500 MHz
50ヘ High Power 5 to 500 MHz
|
Mini-Circuits
|
| SA20AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
2MM TERMINAL STRIPS
HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| 2SC5809 |
Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Power Device - Power Transistors - Swicthing
|
Panasonic, Corp.
|
| DDTB122LC-7-F DDTB142JC DDTB142TC DDTB122LC2 DDTB1 |
Prebiased Transistors
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| PDTB123E PDTB123EK PDTB123ES PDTB123ET |
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
|
NXP Semiconductors
|
| PDTD123E PDTD123EK PDTD123ES PDTD123ET PDTD123E-15 |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 2.2 k楼?
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
|
NXP Semiconductors
|
|
