| PART |
Description |
Maker |
| XR-2001 XR-2002 XR2001 XR-2003 |
(XR-2001 - XR2-004) High Voltage / High Current Darlington Transistor Arrays
(XR2001 - XR2004) High Voltage / High Current Darlington Transistor Arrays
|
Exar
|
| BC369 C62702-C748 |
From old datasheet system
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BC368 C62702-C747 |
NPN General Purpose Amplifier
NPN Silicon AF Transistor (High current gain High collector current)
From old datasheet system
|
SIEMENS AG
Fairchild Semiconductor
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| D965ASSG-X-AE3-R D965SSG-X-AE3-R D965ASS-15 D965SS |
LOW VOLTAGE HIGH CURRENT TRANSISTOR
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
|
Unisonic Technologies
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| BC638ZL1 BC636-16ZL1 BC640 BC640ZL1 BC636 BC636-16 |
Transistor Silicon Plastic PNP
High Current Transistors PNP Silicon
High Current Transistors(PNP Silicon)
High Current Transistors 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| KTC3210 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| TA1282N KTA1282 |
General Purpose Transistor
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
