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BS616LV8017 -    Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16

BS616LV8017_280438.PDF Datasheet

 
Part No. BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV8017EC-55 BS616LV8017EC-70 BS616LV8017ECG55 BS616LV8017ECG70 BS616LV8017ECP55 BS616LV8017ECP70 BS616LV8017EI BS616LV8017EI-55 BS616LV8017EI-70 BS616LV8017EIG55 BS616LV8017EIG70 BS616LV8017EIP55 BS616LV8017EIP70 BS616LV8017FC BS616LV8017FC-55 BS616LV8017FC-70 BS616LV8017FCG55 BS616LV8017FCG70 BS616LV8017FCP55 BS616LV8017FCP70 BS616LV8017FI BS616LV8017FI-55 BS616LV8017FI-70 BS616LV8017FIG55 BS616LV8017FIG70 BS616LV8017FIP55
Description    Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16

File Size 269.81K  /  9 Page  

Maker

Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: BS616LV8017ECP70
Maker: BSI
Pack: TSSOP
Stock: Reserved
Unit price for :
    50: $7.46
  100: $7.09
1000: $6.71

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 Full text search :    Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
 Product Description search :    Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16


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