| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MP6801 |
Power MOS FET Module Silicon N / P Channel MOS Type
TOSHIBA POWER MOS FET MODULE SILICON & P CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| 2SK1310A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
TOSHIBA
|
| HAT2202C HAT2202C-15 |
Silicon N Channel MOS FET powerswitching
Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0346DPA RJK0346DPA-00-J0 |
65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
